DocumentCode :
1737848
Title :
Magnetoresistive random access memories: integration issues for novel magnetic devices into memory cells
Author :
Boeve, Hans ; Das, Jo ; Borghs, Gustaaf ; De Boeck, Jo ; Sousa, Ricardo C. ; Melo, Luís V. ; Freitas, Paulo P.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
1999
fDate :
22-24 Nov. 1999
Firstpage :
81
Lastpage :
84
Abstract :
We describe a DRAM-like approach towards a nonvolatile magnetoresistive memory integrating magnetic and semiconductor devices into one cell. For a good performance in terms of speed and signal, the magnetic storage element itself must be considered in a semiconductor environment which defines the substrate to be used, as well as the read-out electronics for addressing the information. A global assessment for the integration of MRAM cells is addressed.
Keywords :
integrated circuit technology; magnetic storage; magnetoresistive devices; random-access storage; readout electronics; DRAM-like approach; MRAM cell integration; magnetic device integration; magnetic storage element; magnetic/semiconductor device integration; magnetoresistive random access memories; memory cells; nonvolatile magnetoresistive memory; read-out electronics; semiconductor environment; substrate use; Anisotropic magnetoresistance; CMOS technology; Conductors; Magnetic anisotropy; Magnetic devices; Magnetic semiconductors; Magnetic separation; Perpendicular magnetic anisotropy; Random access memory; Semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 1999. ICM '99. The Eleventh International Conference on
Print_ISBN :
0-7803-6643-3
Type :
conf
DOI :
10.1109/ICM.2000.884810
Filename :
884810
Link To Document :
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