Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters

Author

Abdul-Rahim, A.I. ; Marsh, C.D. ; Nash, G.R. ; Mitchell, M. ; Booker, G.R. ; Ashburn, P.

Author_Institution

Microelectron. Lab., MIMOS Bhd, Malaysia

fYear

1999

fDate

22-24 Nov. 1999

Firstpage

255

Lastpage

258

Abstract

The electrical characteristics of deep submicron bipolar transistors incorporating low thermal budget in-situ phosphorus doped single crystal silicon emitters are reported. This type of transistor exhibits a very ideal base current ideality factor and low emitter resistance. The use of in-situ phosphorus doping is shown to eliminate the degradation of electrical characteristics seen in small geometry transistors due to emitter plug effects.

Keywords

bipolar transistors; doping profiles; elemental semiconductors; phosphorus; semiconductor device measurement; silicon; Si:P; base current ideality factor; bipolar transistors; electrical characteristics; electrical characteristics degradation; emitter plug effects; emitter resistance; in-situ phosphorus doped single-crystal silicon emitters; in-situ phosphorus doping; small geometry transistors; thermal budget; Application specific processors; Bipolar transistors; Doping; Electric resistance; Electric variables; Geometry; Plugs; Silicon; Thermal degradation; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1999. ICM '99. The Eleventh International Conference on

Print_ISBN

0-7803-6643-3

Type

conf

DOI

10.1109/ICM.2000.884852

Filename

884852