Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters

The electrical characteristics of deep submicron bipolar transistors incorporating low thermal budget in-situ phosphorus doped single crystal silicon emitters are reported. This type of transistor exhibits a very ideal base current ideality factor and low emitter resistance. The use of in-situ phosphorus doping is shown to eliminate the degradation of electrical characteristics seen in small geometry transistors due to emitter plug effects.