Title :
An electrostatically doped planar device concept
Author :
Krauss, T. ; Wessely, Frank ; Schwalke, Udo
Author_Institution :
Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany
Abstract :
In this paper, we propose and demonstrate by simulation an electrostatically doped and therefore voltage-programmable planar field-effect-transistor (FET) structure which is based on our results of already published Si-nanowire (SiNW) devices. The key technology for this dual-gated general purpose FET contain Schottky S/D junctions on a silicon-on-insulator (SOI) platform. The desired transistor type, i.e. NFET or PFET, is selectable on the fly by applying an appropriate control-voltage which significantly enhances flexibility in design of integrated circuits.
Keywords :
Schottky gate field effect transistors; electrostatic devices; semiconductor junctions; silicon-on-insulator; FET structure; NFET; PFET; SOI platform; Schottky S-D junctions; SiNW devices; control-voltage; dual-gated general purpose FET; electrostatically doped planar device concept; integrated circuit design; silicon-nanowire devices; silicon-on-insulator platform; voltage-programmable planar field-effect-transistor; Field effect transistors; Leakage currents; Nanoscale devices; Silicon; Silicon-on-insulator; Threshold voltage; SOI; ambipolar; electrostatic doping; reconfigurable; voltage-programmable;
Conference_Titel :
Design & Technology of Integrated Systems In Nanoscale Era (DTIS), 2014 9th IEEE International Conference On
Conference_Location :
Santorini
DOI :
10.1109/DTIS.2014.6850650
