Soft recovery characteristics of punch-through power diodes by proton irradiation

Author

Zhang, Changli ; Waldmeyer, Juerg ; Roggwiller, Peter ; Chen, Zhiming ; Lu, Yapeng

Author_Institution

Xian Power Electron. Res. Inst., China

Volume

1

fYear

2000

fDate

2000

Firstpage

229

Abstract

In this paper, we have experimentally compared the softness of reverse recovery characteristics of punch-through 1000 A/2000 V power alloyed diodes produced with different lifetime control techniques. It was found that the best softness factor could be obtained with a proton penetration depth of 220 μm, achieved with an irradiation energy of 5 MeV. For comparison, the effects of 5-12 MeV electron irradiation and platinum diffusion and some combinations were studied. The simulation results for proton irradiated device based on Silvaco Mixed-mode verification indicated in qualitative agreement with measurements

Keywords

diffusion; electron beam effects; platinum; power semiconductor diodes; proton effects; 1000 A; 200 mum; 2000 V; 5 to 12 MeV; Pt; Silvaco Mixed-mode verification; irradiation energy; lifetime control techniques; platinum diffusion; power alloyed diodes; proton irradiation; proton penetration depth; punch-through power diodes; soft recovery characteristics; softness factor; Alloying; Annealing; Cathodes; Doping; Electron emission; Platinum; Power electronics; Protons; Semiconductor diodes; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International

Conference_Location

Beijing

Print_ISBN

7-80003-464-X

Type

conf

DOI

10.1109/IPEMC.2000.885362

Filename

885362