Title :
Weak scaling of thermal resistance in AlGaAs-GaAs heterojunction bipolar transistors
Author :
Reid, A.R. ; Kleckner, T.C. ; Jackson, M.K. ; Zampardi, P.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., British Columbia Univ., Vancouver, BC, Canada
Abstract :
Measured thermal resistance in AlGaAs-GaAs HBTs varies weakly with emitter area and geometry. 3D finite element modelling shows that the origin is the finite thickness of the heat-generating region, and that emitter metallization can substantially reduce peak temperature
Keywords :
III-V semiconductors; aluminium compounds; finite element analysis; gallium arsenide; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device metallisation; semiconductor device models; thermal resistance; 3D finite element modelling; AlGaAs-GaAs; AlGaAs-GaAs HBTs; AlGaAs-GaAs heterojunction bipolar transistors; emitter area; emitter geometry; emitter metallization; finite heat-generating region thickness; peak temperature reduction; thermal resistance; thermal resistance scaling; Area measurement; Electrical resistance measurement; Finite element methods; Geometry; Heterojunctions; Metallization; Resistance heating; Solid modeling; Thermal resistance; Thickness measurement;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886189
