Title :
The effects of a ground shield on spiral inductors fabricated in a silicon bipolar technology
Author :
Yim, Seong-Mo ; Chen, Tong ; O, Kenneth K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
The frequency dependence of the model parameters of patterned ground shield (PGS) inductors in large part is explained as a consequence of modeling a distributed system with a lumped model. Using an n+-buried/n-well PGS, the peak Q is improved by ~25% with small changes of L and Cp. Having a PGS does not significantly improve isolation between inductors
Keywords :
Q-factor; bipolar integrated circuits; buried layers; doping profiles; electromagnetic shielding; elemental semiconductors; inductors; integrated circuit modelling; lumped parameter networks; silicon; PGS inductors; distributed system; frequency dependence; ground shield effects; inductance; inductor isolation; lumped model; model parameters; modeling; n+-buried/n-well PGS; on-chip spiral inductors; patterned ground shield inductors; peak capacitance; silicon bipolar technology; Eddy currents; Frequency dependence; Inductors; Integrated circuit modeling; Integrated circuit technology; Microwave technology; Q factor; Shape; Silicon; Spirals;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-6384-1
DOI :
10.1109/BIPOL.2000.886193
