An integrated 20 GHz SiGe bipolar differential oscillator with high tuning range

Author

Ettinger, Klaus ; Bergmayr, Markus ; Pretl, Harald ; Thomann, Wolfgang ; Fenk, Josef ; Weigel, Robert

Author_Institution

Inst. for Commun. & Inf. Eng., Linz Univ., Austria

fYear

2000

fDate

2000

Firstpage

161

Lastpage

163

Abstract

A fully integrated, differential LC oscillator manufactured in Infineon´s B7HF SiGe bipolar technology with an f_T and f_max of 75 GHz is presented. The oscillator features a tank consisting of on-chip stripline inductors and the parasitic capacitances of the oscillator transistors. A tuning range of 14-21.5 GHz over bias current is achieved. The output buffer is inductively coupled to the tank. Total current consumption including the buffer is 13 mA from a 3 V supply at the maximum oscillation frequency of 21.5 GHz. The measured phase-noise at 1 MHz offset is -85 dBc/Hz at a core bias current of 7 mA

Keywords

Ge-Si alloys; MMIC oscillators; bipolar MMIC; capacitance; circuit tuning; inductors; integrated circuit noise; phase noise; semiconductor materials; strip line components; 13 mA; 14 to 21.5 GHz; 20 GHz; 3 V; 7 mA; 75 GHz; Infineon B7HF SiGe bipolar technology; SiGe; bias current; core bias current; current consumption; cut-off frequency; differential LC oscillator; inductively coupled output buffer; integrated SiGe bipolar differential oscillator; maximum operating frequency; maximum oscillation frequency; measured phase-noise; on-chip stripline inductors; oscillator tank; oscillator transistors; parasitic capacitance; tuning range; Current measurement; Frequency; Germanium silicon alloys; Inductors; Manufacturing; Oscillators; Parasitic capacitance; Silicon germanium; Stripline; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2000. Proceedings of the 2000

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-6384-1

Type

conf

DOI

10.1109/BIPOL.2000.886194

Filename

886194