Title :
Assessment of oxide charge density and centroid from fowler-nordheim derivative characteristics in MOS structures after uniform gate stress
Author :
Kies, R. ; Egilsson, T. ; Ghibaudo, G. ; Pananakakis, G.
Author_Institution :
Laboratoire de Physique des Composants a Semiconducteurs, UMR CNRS
Keywords :
Cathodes; Dielectrics; Effective mass; Electrodes; Silicon; Stress; Temperature; Tunneling; Ultra large scale integration; Voltage;
Conference_Titel :
Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on
Print_ISBN :
0-7803-3369-1
DOI :
10.1109/ESREF.1996.888176
