Assessment of oxide charge density and centroid from fowler-nordheim derivative characteristics in MOS structures after uniform gate stress

Author

Kies, R. ; Egilsson, T. ; Ghibaudo, G. ; Pananakakis, G.

Author_Institution

Laboratoire de Physique des Composants a Semiconducteurs, UMR CNRS

fYear

1996

fDate

1996

Firstpage

1619

Lastpage

1622

Keywords

Cathodes; Dielectrics; Effective mass; Electrodes; Silicon; Stress; Temperature; Tunneling; Ultra large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability of Electron Devices, Failure Physics and Analysis, 1996. Proceedings of the 7th European Symposium on

Print_ISBN

0-7803-3369-1

Type

DOI

10.1109/ESREF.1996.888176

Filename

888176

Link To Document