ESD evaluation of tunneling magnetoresistive (TMR) devices

Author

Wallash, Albert ; Hillman, James ; Wang, Dexin

Author_Institution

Quantum Corp., Milpitas, CA, USA

fYear

2000

fDate

26-28 Sept. 2000

Firstpage

470

Lastpage

474

Abstract

In this work, we study and compare the dielectric breakdown and human body model electrostatic discharge (ESD) failure levels of tunneling magnetoresistive (TMR) sensors. An equivalent circuit for the TMR device is developed and used in SPICE circuit simulations to study its response to electrostatic discharge. Dielectric breakdown averaged 2.3 V and ESD testing showed device shorting at 8.6 V HBM.

Keywords

SPICE; circuit simulation; electric breakdown; electrostatic discharge; equivalent circuits; magnetic heads; magnetic recording; magnetic sensors; magnetoresistive devices; tunnelling; 2.3 V; 8.6 V; ESD evaluation; ESD testing; HBM; SPICE circuit simulation; TMR devices; TMR sensors; device shorting; dielectric breakdown; electrostatic discharge response; equivalent circuit; human body model ESD failure; human body model electrostatic discharge failure; tunneling magnetoresistive devices; tunneling magnetoresistive sensors; Biological system modeling; Circuit simulation; Circuit testing; Dielectric breakdown; Electrostatic discharge; Equivalent circuits; Humans; Magnetic sensors; SPICE; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-58537-018-5

Type

conf

DOI

10.1109/EOSESD.2000.890118

Filename

890118