DocumentCode
1739177
Title
Excellent silicon nitride films made by hybrid process and their application to a-Si TFTs
Author
Migitaka, M.
Author_Institution
Toyota Technol. Inst., Nagoya, Japan
Volume
1
fYear
2000
fDate
2000
Firstpage
23
Abstract
From a discovery of ammonia plasma effect, we have developed “hybrid-process” where plasma and light are complementally used to make excellent silicon nitride films at low temperatures. The films made by the hybrid process have excellent interfaces as well as high dense film properties. High electron mobility a-Si TFTs were made by using the films as gate insulators
Keywords
electron mobility; insulating thin films; plasma CVD coatings; silicon compounds; thin film transistors; Si; SiN; a-Si TFT; ammonia plasma effect; electron mobility; gate insulator; hybrid process; low temperature deposition; photo-CVD; plasma enhanced CVD; silicon nitride film; Electron mobility; Plasma applications; Plasma chemistry; Plasma density; Plasma measurements; Plasma temperature; Semiconductor films; Silicon; Substrates; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.890185
Filename
890185
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