DocumentCode
1739188
Title
Hydrogenic states in GaAs quantum-well wires under applied magnetic fields
Author
Niculescu, Ecaterina
Author_Institution
Dept. of Phys., Politehnica Univ. of Bucharest, Romania
Volume
1
fYear
2000
fDate
2000
Firstpage
113
Abstract
Using the effective mass approximation within the variational approach, we have calculated the binding energy of the ground state of a hydrogenic on-center donor in a cylindrical GaAs quantum-well wire, under the action of a magnetic field applied in the axial direction. Our results are obtained as a function of the wire radii, and the magnetic field. We found that the values of the binding energy are determined by the competition between the quantum confinement and the applied magnetic field
Keywords
III-V semiconductors; binding energy; effective mass; gallium arsenide; magnetic field effects; semiconductor quantum wires; variational techniques; GaAs; III-V semiconductors; applied magnetic fields; binding energy; cylindrical quantum-well wires; effective mass approximation; ground state; hydrogenic states; on-center donor; quantum confinement; variational approach; wire radii; Equations; Gallium arsenide; Impurities; Magnetic field measurement; Magnetic fields; Physics; Quantum wells; Stationary state; Wave functions; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.890199
Filename
890199
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