• DocumentCode
    1739193
  • Title

    Conduction via deep levels in hydrogen plasma treated Au-Si Schottky structures

  • Author

    Simeonov, S. ; Kafedjiiska, E. ; Szekeres, A.

  • Author_Institution
    Inst. of Solid State Phys., Sofia, Bulgaria
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    147
  • Abstract
    The forward current-voltage and 1 MHz capacitance-voltage characteristics of Au-Si structures, formed on hydrogen plasma treated substrates are studied in the temperature range 123-300 K. The results show that the current is due to electron tunneling via deep levels generated in the Si near to metal-silicon interface by plasma exposure
  • Keywords
    Schottky diodes; deep levels; elemental semiconductors; gold; plasma materials processing; semiconductor-metal boundaries; silicon; tunnelling; 1 MHz; 123 to 300 K; Au-Si; H2; Schottky diodes; Schottky structures; capacitance-voltage characteristics; deep levels; electron tunneling; forward current-voltage characteristics; metal-silicon interface; plasma exposure; Capacitance-voltage characteristics; Current measurement; Electrons; Hydrogen; Plasma density; Plasma properties; Plasma temperature; Schottky diodes; Substrates; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2000. CAS 2000 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5885-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2000.890207
  • Filename
    890207
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1739193