Title :
Conduction via deep levels in hydrogen plasma treated Au-Si Schottky structures
Author :
Simeonov, S. ; Kafedjiiska, E. ; Szekeres, A.
Author_Institution :
Inst. of Solid State Phys., Sofia, Bulgaria
Abstract :
The forward current-voltage and 1 MHz capacitance-voltage characteristics of Au-Si structures, formed on hydrogen plasma treated substrates are studied in the temperature range 123-300 K. The results show that the current is due to electron tunneling via deep levels generated in the Si near to metal-silicon interface by plasma exposure
Keywords :
Schottky diodes; deep levels; elemental semiconductors; gold; plasma materials processing; semiconductor-metal boundaries; silicon; tunnelling; 1 MHz; 123 to 300 K; Au-Si; H2; Schottky diodes; Schottky structures; capacitance-voltage characteristics; deep levels; electron tunneling; forward current-voltage characteristics; metal-silicon interface; plasma exposure; Capacitance-voltage characteristics; Current measurement; Electrons; Hydrogen; Plasma density; Plasma properties; Plasma temperature; Schottky diodes; Substrates; Temperature measurement;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890207
