DocumentCode
1739194
Title
New versatile and easy selective boron diffusion
Author
Liiceanu, Carmen ; Niculae, M. ; Rauta, M.
Author_Institution
S.C. Baneasa S.A., Bucharest, Romania
Volume
1
fYear
2000
fDate
2000
Firstpage
151
Abstract
The paper presents a new method for selective boron diffusion using metallic source and normal open quartz tube, for a wide range of surface concentration. The advantages of the method are: good process reproducibility, very thin, easy removable glass layer, effortless operation and best financial results
Keywords
boron; diffusion; elemental semiconductors; impurity distribution; semiconductor doping; silicon; Si:B; metallic source; normal open quartz tube; process reproducibility; removable glass layer; selective diffusion; surface concentration; Atmosphere; Boats; Boron; Fluid flow; Glass; Nitrogen; Silicon; Solids; Surface treatment; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.890208
Filename
890208
Link To Document