A technology for GaAs-based optoelectronic integrated circuits

Author

Cengher, D. ; Aperathitis, E. ; Androulidaki, M. ; Deligeorgis, G. ; Cengher, M. ; Amimer, K. ; Hatzopoulos, Z. ; Georgakilas, A.

Author_Institution

Inst. of Electron. Structure & Laser, Found. for Res. & Technol.-HELLAS, Heraklion-Crete, Greece

Volume

1

fYear

2000

fDate

2000

Firstpage

155

Abstract

The use of a single growth epitaxial structure was investigated for planar integration of GaAs-based laser diodes and photodetectors. Cleaved mirror lasers, non-guided wave and guided wave photodetectors were fabricated and measured, for structure optimization. A BCl₃ RIE process was developed and lasers with RIE etched mirrors were fabricated exhibiting a threshold current density less than 1 kA/cm²

Keywords

III-V semiconductors; current density; gallium arsenide; integrated optoelectronics; photodetectors; semiconductor epitaxial layers; semiconductor lasers; sputter etching; GaAs; RIE process; cleaved mirror lasers; guided wave photodetectors; laser diodes; nonguided wave photodetectors; optoelectronic integrated circuits; planar integration; single growth epitaxial structure; structure optimization; threshold current density; Diode lasers; Gallium arsenide; Integrated circuit technology; Laser theory; Mirrors; Optical waveguides; Photodetectors; Photonic integrated circuits; Surface emitting lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2000. CAS 2000 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-5885-6

Type

conf

DOI

10.1109/SMICND.2000.890209

Filename

890209