Title :
Nonuniformities in metal-semiconductor contacts
Author :
Chaika, G.E. ; Konakova, R.V. ; Lyapin, V.G. ; Milenin, V.V. ; Soloviev, E.A. ; Voitsikhovskyi, D.I. ; Boltovets, N.S. ; Ivanov, V.N.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
For some metal-semiconductor contacts we investigated the effect of nonuniformity size and distribution on the excess current for forward branches of I-V curves at low voltages. The curves were taken before and after rapid thermal annealing. It is shown that distributions of nonuniformity heights at metal surfaces and metal-semiconductor interfaces are described by Gaussians whose parameters are given
Keywords :
dislocations; point defects; rapid thermal annealing; semiconductor-metal boundaries; Gaussians; I-V curves; excess current; metal-semiconductor contacts; nonuniformity distribution; nonuniformity heights; nonuniformity size; rapid thermal annealing; Atomic force microscopy; Distribution functions; Fluctuations; Gaussian distribution; Low voltage; Metastasis; Physics; Production; Rapid thermal annealing; Thermodynamics;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890212
