Title :
Accurate modeling of Ni/6H-SiC Schottky barrier diode (SBD) forward characteristics at high current densities
Author :
Brezeanu, G. ; Badila, M. ; Tudor, B. ; Millan, J. ; Godignon, P. ; Locatelli, Marie Laure ; Chante, J.P. ; Amaratunga, G. ; Udrea, F. ; Mihaila, A.
Author_Institution :
Univ. Politehnica Bucharest, Romania
Abstract :
An accurate modeling and complete parameter extraction of the forward characteristics of the Ni/6H-SiC Scottky barrier diodes (SBD) for high level current densities are presented. The model takes into account the high level injection effects of the excess majority carriers and current dependence of the series resistance. Direct extraction of the large bias SBD parameters is carried out. A very good agreement between the simulated forward curves using extracted parameters and measured data up to 500 A/cm2 is obtained
Keywords :
Schottky diodes; current density; nickel; semiconductor device models; semiconductor materials; silicon compounds; Ni-SiC; Schottky barrier diode; current densities; excess majority carriers; forward characteristics; high level injection effects; large bias SBD parameters; series resistance; Current density; Data mining; Electrons; Knee; Leakage current; Parameter extraction; Schottky barriers; Schottky diodes; Temperature; Voltage;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890216
