Accurate modeling of Ni/6H-SiC Schottky barrier diode (SBD) forward characteristics at high current densities

Author

Brezeanu, G. ; Badila, M. ; Tudor, B. ; Millan, J. ; Godignon, P. ; Locatelli, Marie Laure ; Chante, J.P. ; Amaratunga, G. ; Udrea, F. ; Mihaila, A.

Author_Institution

Univ. Politehnica Bucharest, Romania

Volume

1

fYear

2000

fDate

2000

Firstpage

193

Abstract

An accurate modeling and complete parameter extraction of the forward characteristics of the Ni/6H-SiC Scottky barrier diodes (SBD) for high level current densities are presented. The model takes into account the high level injection effects of the excess majority carriers and current dependence of the series resistance. Direct extraction of the large bias SBD parameters is carried out. A very good agreement between the simulated forward curves using extracted parameters and measured data up to 500 A/cm² is obtained

Keywords

Schottky diodes; current density; nickel; semiconductor device models; semiconductor materials; silicon compounds; Ni-SiC; Schottky barrier diode; current densities; excess majority carriers; forward characteristics; high level injection effects; large bias SBD parameters; series resistance; Current density; Data mining; Electrons; Knee; Leakage current; Parameter extraction; Schottky barriers; Schottky diodes; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2000. CAS 2000 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-5885-6

Type

conf

DOI

10.1109/SMICND.2000.890216

Filename

890216