DocumentCode :
1739207
Title :
Some annealing effects in proton irradiated silicon detectors
Author :
Pintilie, I. ; Petris, M. ; Tivarus, C. ; Moll, M. ; Fretwurst, E. ; Lindstroem, G.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest-Magurele, Romania
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
259
Abstract :
Annealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is φeq=1.82×1013 cm-2) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. The changes in the microscopic features using the annealing treatment were investigated using Thermally Stimulated Current method
Keywords :
annealing; proton effects; silicon radiation detectors; thermally stimulated currents; Si; Si diode; annealing; inversion effect; proton irradiation; silicon detector; thermally stimulated current; Annealing; Diodes; Leakage current; Materials testing; Microscopy; Neutrons; Physics; Protons; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
Type :
conf
DOI :
10.1109/SMICND.2000.890231
Filename :
890231
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1739207
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