• DocumentCode
    1739207
  • Title

    Some annealing effects in proton irradiated silicon detectors

  • Author

    Pintilie, I. ; Petris, M. ; Tivarus, C. ; Moll, M. ; Fretwurst, E. ; Lindstroem, G.

  • Author_Institution
    Nat. Inst. of Mater. Phys., Bucharest-Magurele, Romania
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    259
  • Abstract
    Annealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is φeq=1.82×1013 cm-2) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. The changes in the microscopic features using the annealing treatment were investigated using Thermally Stimulated Current method
  • Keywords
    annealing; proton effects; silicon radiation detectors; thermally stimulated currents; Si; Si diode; annealing; inversion effect; proton irradiation; silicon detector; thermally stimulated current; Annealing; Diodes; Leakage current; Materials testing; Microscopy; Neutrons; Physics; Protons; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2000. CAS 2000 Proceedings. International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5885-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2000.890231
  • Filename
    890231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1739207