An analytical model for static characteristics of a Pseudo-MOS transistor with neutral channel

The Pseudo-MOS transistor can be obtained on all SOI structure, without any lithographic technique. The aim of this paper is to give an accurate model for the volume current of an ψ-MOSFET, when a non-uniform neutral channel between source and drain exists. A possible application is that in the domain of the microsensors in SOI technology, that implies the conduction through neutral channel. The PISCES simulations and analytical models are 2-dimensional. Some experiments on pseudo-MOS transistor manufactured in SIMOX technique are achieved to validate the analytical model