DocumentCode :
1739215
Title :
A comparison between various empirical models for TCAD purposes
Author :
Govoreanu, B. ; Suykens, J. ; Schoenmaker, W. ; Amza, C. ; Dima, G. ; Vandewalle, J. ; Profirescu, M.
Author_Institution :
IMEC, Leuven, Belgium
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
315
Abstract :
In this paper we discuss some of the existing response surface modeling techniques currently used for TCAD purposes and bring to the readers´ attention a Bayesian framework for training feed-forward neural networks. We assess the model performances of different models by studying a 0.25 μm nMOS transistor. We show that the Bayesian learning neural network modeling may successfully replaces traditional models in particular cases
Keywords :
Bayes methods; MOSFET; feedforward neural nets; learning (artificial intelligence); semiconductor device models; surface fitting; technology CAD (electronics); 0.25 micron; Bayesian learning model; NMOS transistor; TCAD; empirical model; feedforward neural network; response surface model; Bayesian methods; Computer errors; Feedforward neural networks; Feedforward systems; Least squares approximation; MOS devices; Neural networks; Response surface methodology; Software tools; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
Type :
conf
DOI :
10.1109/SMICND.2000.890244
Filename :
890244
Link To Document :
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