Title :
Radiation effects in low-temperature stressed power VDMOS transistors
Author :
Djoric-Veljkovic, S. ; Davidovic, V. ; Golubovic, S. ; Stojadinovic, N.
Author_Institution :
Fac. of Technol., Nis Univ., Serbia
Abstract :
In this paper the results of investigation of radiation effects in low-temperature stressed commercial n-channel power VDMOS transistors are presented. By analyzing obtained results, the mechanisms responsible for observed effects are modeled
Keywords :
gamma-ray effects; power MOSFET; N-channel power VDMOS transistor; low-temperature stress; radiation effects; Artificial satellites; Capacitors; Frequency; Power engineering and energy; Power supplies; Radiation effects; Stress; Temperature; Threshold voltage; Transformers;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890249
