Title :
The radial confinement: a new approach to high voltage lateral power devices
Author :
Krishnan, S. ; De Souza, M.M. ; Narayanan, E. M Sankara ; Vellvehí, M. ; Flores, D. ; Rebollo, J. ; Millán, J.
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
Abstract :
This paper presents a novel, radial confinement approach to improve the breakdown performance of lateral power devices on SOS technologies. The method is based on the fact that the variation in charge can be achieved by changing the width of the device form anode to cathode. Experimental results from radial diodes fabricated in SOS technology show a blocking capability higher than conventional counter parts
Keywords :
power semiconductor devices; semiconductor device breakdown; silicon-on-insulator; SOS technology; electric breakdown; high voltage lateral power device; radial confinement; Anodes; CMOS technology; Circuits; Diodes; Doping; Electric breakdown; Isolation technology; Power system protection; Silicon on insulator technology; Voltage;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890252
