Title :
Silicon nitride layers made by EBEP and their application to a-Si TFTs
Author :
Masuko, S. ; Hara, T. ; Migitaka, M.
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
Abstract :
High electron mobility a-Si TFTs were made by using silicon nitride films as gate insulators. EBEP has enough potential to dissociate nitrogen gas into radical nitrogen atoms, which nitrifies Si as well as depositing silicon nitride by chemical reaction with SiH4
Keywords :
amorphous semiconductors; electron mobility; elemental semiconductors; insulating thin films; nitridation; plasma deposited coatings; silicon; silicon compounds; thin film transistors; Si-SiN; a-Si TFT; chemical reaction; electron beam excited plasma; electron mobility; gate insulator; nitridation; nitrogen dissociation; silicon nitride film; Argon; Atomic measurements; Electron beams; Insulation; Nitrogen; Plasma properties; Semiconductor films; Silicon; Substrates; Thin film transistors;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890253
