Title :
Analysis of the heterostructures Stark resonance by using generalized impedance method
Author_Institution :
Fac. of Electron. & Telecommun., Politehnica Univ. of Bucharest, Romania
Abstract :
A generalization of the Impedance Method are proposed for the study of the double-barrier resonant tunneling structures under electric bias, taking into account the tunneling time delay. The feasibility of the DBRT with triangular well is also analyzed. We have shown that the characteristics of these structures make its applicable for broad bandwidths filters for high frequency and for high-speed resonant tunneling devices
Keywords :
Stark effect; electric impedance; resonant tunnelling devices; semiconductor heterojunctions; semiconductor quantum wells; Stark resonance; double-barrier resonant tunneling structure; electric bias; generalized impedance method; high-frequency broadband filter; high-speed device; semiconductor heterostructure; triangular quantum well; tunneling time delay; Bandwidth; Delay effects; Eigenvalues and eigenfunctions; Electrons; Energy states; Impedance measurement; Microwave filters; Resonance; Resonant tunneling devices; Schrodinger equation;
Conference_Titel :
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5885-6
DOI :
10.1109/SMICND.2000.890256
