High photodetection gain in a resonant tunneling diode waveguide modulator/detector

Author

Martins-Filho, J.F. ; De Araujo, R.E. ; Gomes, A.S.L. ; Figueiredo, J.M.L. ; Stanley, C.R. ; Ironside, C.N.

Author_Institution

Dept. de Eletronica e Sistemas, Univ. Federal de Pernambuco, Recife, Brazil

Volume

1

fYear

2000

fDate

2000

Firstpage

15

Abstract

Resonant tunneling diode (RTD) optoelectronic devices have attracted considerable attention because their negative differential resistance (NDR) characteristics, which gives wide bandwidth electronic gain, can be applied to high-speed electroabsorption modulation and short optical pulse generation. The device we report on here is an AlAs-InGaAs-AlAs double barrier RTD integrated with a InGaAlAs optical waveguide, which acts as a modulator and also as a photoconductive detector with its own on-chip electronic amplifier

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical waveguides; photodetectors; photodiodes; resonant tunnelling diodes; AlAs-InGaAs-AlAs; AlAs-InGaAs-AlAs double barrier RTD; InGaAlAs; InGaAlAs optical waveguide; high photodetection gain; high-speed electroabsorption modulation; negative differential resistance; on-chip electronic amplifier; optoelectronic devices; photoconductive detector; resonant tunneling diode optoelectronic devices; resonant tunneling diode waveguide modulator; short optical pulse generation; wide bandwidth electronic gain; Bandwidth; Diodes; High speed optical techniques; Integrated optics; Optical modulation; Optical pulse generation; Optical waveguides; Optoelectronic devices; Pulse modulation; Resonant tunneling devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890650

Filename

890650