Title :
High photodetection gain in a resonant tunneling diode waveguide modulator/detector
Author :
Martins-Filho, J.F. ; De Araujo, R.E. ; Gomes, A.S.L. ; Figueiredo, J.M.L. ; Stanley, C.R. ; Ironside, C.N.
Author_Institution :
Dept. de Eletronica e Sistemas, Univ. Federal de Pernambuco, Recife, Brazil
Abstract :
Resonant tunneling diode (RTD) optoelectronic devices have attracted considerable attention because their negative differential resistance (NDR) characteristics, which gives wide bandwidth electronic gain, can be applied to high-speed electroabsorption modulation and short optical pulse generation. The device we report on here is an AlAs-InGaAs-AlAs double barrier RTD integrated with a InGaAlAs optical waveguide, which acts as a modulator and also as a photoconductive detector with its own on-chip electronic amplifier
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical waveguides; photodetectors; photodiodes; resonant tunnelling diodes; AlAs-InGaAs-AlAs; AlAs-InGaAs-AlAs double barrier RTD; InGaAlAs; InGaAlAs optical waveguide; high photodetection gain; high-speed electroabsorption modulation; negative differential resistance; on-chip electronic amplifier; optoelectronic devices; photoconductive detector; resonant tunneling diode optoelectronic devices; resonant tunneling diode waveguide modulator; short optical pulse generation; wide bandwidth electronic gain; Bandwidth; Diodes; High speed optical techniques; Integrated optics; Optical modulation; Optical pulse generation; Optical waveguides; Optoelectronic devices; Pulse modulation; Resonant tunneling devices;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890650
