DocumentCode
1739266
Title
Correlation between the failure mechanism and dark currents of high power photodetectors
Author
Islam, M.S. ; Nespola, A. ; Yeahia, M. ; Wu, M.C. ; Sivco, D.L. ; Cho, A.Y.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
1
fYear
2000
fDate
2000
Firstpage
82
Abstract
We experimentally investigate the role of dark current on the failure mechanism of high power photodiodes. A theoretical model built to fit the experimental data indicates that the effective barrier height and the dark current are the fundamental parameters in the failure mechanism
Keywords
dark conductivity; photodetectors; photodiodes; reliability; dark currents; effective barrier height; failure mechanism; fundamental parameters; high power photodetectors; theoretical model; Dark current; Failure analysis; P-i-n diodes; Photoconductivity; Photodetectors; Photodiodes; Power dissipation; Schottky diodes; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location
Rio Grande
ISSN
1092-8081
Print_ISBN
0-7803-5947-X
Type
conf
DOI
10.1109/LEOS.2000.890684
Filename
890684
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