Performance of 1.3 μm InGaAs/GaAs quantum-dot lasers and their physics

Due to the development of the self-assembling process of InGaAs quantum dots during highly-strained epitaxy, the performance of self-assembled quantum-dot lasers has made remarkable progress. This paper presents some topics in our recent research on self-assembled InGaAs/GaAs quantum-dot lasers: growth of high-density self-assembled quantum dots by molecular beam epitaxy, room-temperature CW lasing at a wavelength of 1.3 μm, and physical properties concerning homogeneous broadening of optical gain of a single dot, current and temperature-induced jump of lasing wavelength, optical gain, and nonradiative carrier recombination