Far-infrared near field microscopy

Author

Federici, J. ; Mitrofanov, O. ; Brener, I. ; Harel, R. ; Wynn, J.D. ; Lee, M.

Author_Institution

Dept. of Phys., New Jersey Inst. of Technol., Newark, NJ, USA

Volume

1

fYear

2000

fDate

2000

Firstpage

177

Abstract

We report on a near-field THz microscopic probe based on a low temperature (LT) grown GaAs photoconducting antenna. The near-field probe consists of an integrated aperture-type probe and photoconducting antenna. In this design, the antenna dipole is located in the near field region of the aperture so that the strong evanescent THz electric field is preferentially detected. A schematic diagram of the near-field detector is presented

Keywords

gallium arsenide; infrared detectors; microscopy; photoconducting devices; probes; submillimetre wave antennas; submillimetre wave detectors; GaAs; GaAs photoconducting antenna; antenna dipole; far-infrared near field microscopy; integrated aperture-type probe; low temperature grown; near field region; near-field THz microscopic probe; near-field detector; near-field probe; preferentially detected; strong evanescent THz electric field; Aperture antennas; Detectors; Dipole antennas; Gallium arsenide; Microscopy; Near-field radiation pattern; Object detection; Optical surface waves; Photoconductivity; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890733

Filename

890733