Title :
Multi-energy arsenic-ion-implanted GaAs photoconductors for ultrafast switching and THz generation
Author :
Pan, Ci-Ling ; Liu, Tze-An ; Lin, Gong-Ru ; Tani, Masahiko
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report on preliminary results on ultrafast responses and ultra-wide bandwidth of furnace-annealed multi-energy-bombarded GaAs:As + photoconductors at high bias voltage with much curtailed tail response. Further, we report THz emission characteristics of dipole antennas fabricated on GaAs:As+ in light of previous works on low temperature grown GaAs
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; microwave photonics; optical pulse generation; optical switches; photoconducting materials; submillimetre wave generation; GaAs photoconductors; GaAs:As; GaAs:As+; GaAs:As+ photoconductors; THz emission characteristics; THz generation; arsenic-ion-implanted; curtailed tail response; dipole antennas; furnace-annealed; high bias voltage; low temperature grown GaAs; multi-energy-bombarded; ultra-wide bandwidth; ultrafast responses; ultrafast switching; Charge carrier lifetime; Dark current; Dipole antennas; Gallium arsenide; Molecular beam epitaxial growth; Personal communication networks; Photoconductivity; Tail; Ultrafast optics; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890734
