Title :
High-efficiency optically-pumped mid-IR lasers with integrated absorbers
Author :
Goyal, A.K. ; Turner, G.W. ; Choi, H.K. ; Foti, P.J. ; Manfra, M.J. ; Fan, T.Y. ; Sanchez, A.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
We report on a 4 μm, optically-pumped, Sb-based laser design which allows for the optimization of the active gain region for high temperature operation while preserving high-efficiency and good beam quality. For optically pumped Sb-based lasers operating at 4 μm, the highest efficiency under long-pulse conditions (>25 μs) was reported for an InAsSb-AlAsSb double-heterostructure (DH) laser pumped by 1.9 μm diode lasers
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; infrared sources; laser transitions; light absorption; optical pumping; quantum well lasers; 1.3 W; 1.9 mum; 4 mum; 71 K; InAsSb-AlAsSb; InAsSb-AlAsSb double-heterostructure; Sb-based laser design; active gain region; good beam quality; high temperature operation; high-efficiency; integrated absorbers; long-pulse conditions; optically-pumped mid-IR lasers; optimization; DH-HEMTs; Design optimization; Diode lasers; Integrated optics; Laser beams; Laser excitation; Optical design; Optical pumping; Pump lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890770
