Title :
Monolithic and hybrid integrated GaAs-based photoreceivers for 40 Gbit/s optical communication
Author :
Hurm, V. ; Leven, A. ; Benz, W. ; Berking, M. ; Bronner, W. ; Hülsmann, A. ; Köhler, K. ; Ludwig, M. ; Massler, H. ; Rosenzweig, J. ; Schlechtweg, M. ; Sohn, J. ; Walcher, H. ; Weimann, G.
Author_Institution :
Fraunhofer Inst. of Appl. Solid State Phys., Freiburg, Germany
Abstract :
40 Gbit/s 1.55 μm photoreceivers were manufactured using GaAs-based HEMT distributed amplifiers. The photoreceivers include either a integrated surface-illuminated PIN or a flip-chip mounted edge-illuminated multimode waveguide photodiode
Keywords :
HEMT integrated circuits; III-V semiconductors; distributed amplifiers; flip-chip devices; frequency response; gallium arsenide; hybrid integrated circuits; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodiodes; 1.55 micron; 40 Gbit/s; GaAs; HEMT distributed amplifiers; MBE; cascode pair; conversion gain; dark current; edge-illuminated multimode waveguide photodiode; flip-chip mounted; frequency response; hybrid integrated photoreceivers; integrated surface-illuminated PIN photodiode; monolithic integrated photoreceivers; optical communication; responsivity; transimpedance; Distributed amplifiers; HEMTs; Indium phosphide; Optical amplifiers; Optical fiber communication; Optical signal processing; Optical surface waves; Optical waveguides; PIN photodiodes; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890787
