Title :
Ultra-low power monolithically integrated InGaAs/GaAs phototransceiver incorporating a modulated barrier photodiode and a quantum dot microcavity LED
Author :
Qasaimeh, O. ; Zhou, W. ; Bhattacharya, P. ; Huffaker, D. ; Deppe, D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
We report the design and performance characteristics of GaAs-based low-power phototransceivers which offer large optical gain and very low power dissipation. In these monolithically integrated circuits we have integrated modulated barrier photodiodes with quantum dot-based microcavity LEDs. Quantum dots promise higher quantum efficiency, higher power, together with a more directed emission profile
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; low-power electronics; monolithic integrated circuits; optical receivers; optical transmitters; photodetectors; photodiodes; quantum well devices; semiconductor quantum dots; transceivers; InGaAs-GaAs; OEIC; design; directed emission profile; equivalent circuit; large optical gain; modulated barrier photodiode; modulation characteristics; monolithically integrated phototransceiver; performance characteristics; quantum dot microcavity LED; quantum wells; ultralow power; Gallium arsenide; Indium gallium arsenide; Monolithic integrated circuits; Optical design; Optical modulation; Performance gain; Photodiodes; Power dissipation; Quantum dots; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890789
