Title :
Monolithic InGaAsP/InP HBT 40 Gbps optical receivers
Author :
Melchior, Hans ; Bitter, Martin
Author_Institution :
Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
The increasing needs for ever higher capacity fiber-optical networks, besides wavelength division multiplexing, also favor the highest technically feasible time division multiplexing rates. This presentation starts out with an overview over the presently best 40 Gbit/s InP- and GeSi-HBT receiver technologies. This is to be followed by a detailed description of high performance 40 Gbit/s InGaAsP/InP heterobipolar transistor receiver circuits and their module assembly technology. InGaAsP/InP receivers with bandwidths up to 53 GHz and 40 Gbit/s receiver modules with responsivities of close to 50 V/W and sensitivities estimated to be -10 dBm at 1.55 μm are reported
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; 1.55 micron; 40 Gbit/s; 53 GHz; InGaAsP-InP; high performance; higher capacity fiber-optical networks; module assembly technology; monolithic HBT optical receivers; receiver modules; time division multiplexing; wavelength division multiplexing; Assembly; Bandwidth; Circuits; Electronic mail; Heterojunction bipolar transistors; Indium phosphide; Optical fiber networks; Optical receivers; Time division multiplexing;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890790
