Title :
Noise properties of a digitally modulated millimeter wave source based on an InGaAs-InP bipolar heterojunction photo transistor placed in an optically amplified system
Author :
Bilenca, Alberto ; Lasri, Jacob ; Eisenstein, Gadi ; Ritter, Dan
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
We have recently described an advanced source in which we used optoelectronic mixing in bipolar heterojunction photo transistors (photo - HBT) to generate a millimeter wave carrier which is consequently modulated via application of a digital signal to the base. The present paper addresses noise properties of such a source when placed in an optically amplified system. First, we examine the photo HBT as a detector and calculate carrier to noise ratios (CNR) in the presence of all common noise sources including spontaneous emission. The results are confirmed experimentally. Secondly, we address the noise accompanying digital modulation of the photo mixing product
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microwave photonics; optical noise; photodetectors; phototransistors; semiconductor device models; InGaAs-InP; InGaAs-InP bipolar heterojunction photo transistor; bipolar heterojunction photo transistors; carrier to noise ratios; common noise sources; digital modulation; digital signal; digitally modulated millimeter wave source; millimeter wave carrier; noise properties; optically amplified system; optoelectronic mixing; photo HBT; photo mixing product; spontaneous emission; Detectors; Digital modulation; Heterojunction bipolar transistors; Millimeter wave transistors; Optical mixing; Optical modulation; Optical noise; Signal generators; Signal to noise ratio; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890808
