Title :
Room temperature operation of an electrically injected single-defect photonic bandgap microcavity surface emitting laser
Author :
Sabarinathan, J. ; Zhou, W.D. ; Kochman, B. ; Berg, E. ; Qasaimeh, O. ; Brock, T. ; Pang, S. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
We report here 0.9 μm lasing in a p-n junction 2D photonic band gap (PBG) defect mode microcavity surface-emitting laser with electrical injection. The GaAs based device heterostructure is grown by metal-organic vapor phase epitaxy (MOVPE). It consists of an n+ GaAs contact layer, an n-type lower GaAs/Al0.8Ga0.2As distributed Bragg reflector (DBR) mirror, an undoped λ cavity (λ=0.94 μm) region with two 70 Å pseudomorphic In0.l5Ga0.85As wells in the middle and p-type AlGaAs and contact layers on the top. n- and p-type Al0.96Ga 0.04As layers are also inserted on the respective sides of the cavity region for eventual lateral wet-oxidation during the processing of the device. The photoluminescence emission peak from the quantum wells is observed at 940 nm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; microcavity lasers; p-n heterojunctions; photoluminescence; photonic band gap; quantum well lasers; scanning electron microscopy; spectral line intensity; surface emitting lasers; 0.94 micron; 2D photonic band gap defect mode; 300 K; Al0.96Ga0.04As; GaAs based device heterostructure; GaAs-Al0.8Ga0.2As-AlGaAs; PBG; electrical injection; lateral wet-oxidation; metal-organic vapor phase epitaxy; microcavity surface-emitting laser; p-n junction; photoluminescence emission peak; single-defect photonic bandgap microcavity surface emitting laser; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Gallium arsenide; Laser modes; Microcavities; P-n junctions; Photonic band gap; Surface emitting lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890832
