Large spontaneous emission factor confirmed in CW lasing microdisk injection lasers

Author

Fujita, Masayuki ; Ushigome, Reona ; Baba, Toshihiko

Author_Institution

Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan

Volume

1

fYear

2000

fDate

2000

Firstpage

372

Abstract

Microdisk lasers are suitable for spontaneous emission control due to a high Q lasing mode with an ultra-small volume. However, the clear evaluation of spontaneous factor C is difficult for pulsed and/or photo-pumped devices due to the necessity of a wide range fitting of light-current characteristic from far below threshold. Recently, we have achieved CW lasing in GaInAsP devices with the record low threshold of 40 μA. In this study, we fabricated 1.56 μm GaInAsP compressively-strained QW microdisk injection lasers and observed some clear evidence of large C factors in the lasing characteristics

Keywords

III-V semiconductors; Q-factor; gallium arsenide; indium compounds; laser beams; microdisc lasers; quantum well lasers; spontaneous emission; 1.56 micron; 40 muA; CW lasing microdisk injection lasers; GaInAsP; GaInAsP compressively-strained QW microdisk injection lasers; high Q lasing mode; large C factors; lasing characteristics; spontaneous emission control; spontaneous emission factor; Charge carrier density; Electronic switching systems; Electrons; Equations; Laser modes; Laser theory; Optical control; Optical device fabrication; Spontaneous emission; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.890833

Filename

890833