Analytical modeling and simulation of subthreshold behavior of dual material gate (DMG) Al0.7Ga0.3Sb/InAs HEMT

Author

Arman-Ur-Rashid ; Hossain, Md Aynal ; Rahman, Tanvir ; Mohammedy, Farseem M.

Author_Institution

Electr. & Electron. Eng. (EEE), Bangladesh Univ. of Eng. &Technol. (BUET), Dhaka, Bangladesh

fYear

2014

fDate

23-24 May 2014

Firstpage

1

Lastpage

4

Abstract

In this work, a two dimensional (2-D) analytical model and simulation of dual material gate (DMG) Al_0.7Ga_0.3Sb/InAs High Electron Mobility Transistor (HEMT) has been presented. Superiority of DMG over single material gate (SMG) structure for this kind of HEMTs has been highlighted. Simulation results show the suppression of short channel effects (SCEs) and improvement of carrier transport efficiency. Material with lower work function works as a screening gate while material with higher work function works as a control gate and thus suppresses the short channel effects. The electric field also becomes more uniform and so the carrier transport efficiency improves. This work shows the variation of channel potential and electric field with channel length for both double material gate (DMG) and single material gate (SMG) Al_0.7Ga_0.3Sb/InAs HEMT. All the results have been verified using ATLAS device simulator. So this work shows a simple model to effectively analyze the sub-threshold behavior of DMG Al_0.7Ga_0.3Sb/InAs HEMTs.

Keywords

aluminium compounds; electric fields; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device models; work function; 2D analytical model; ATLAS device simulator; Al_0.7Ga_0.3Sb-InAs; DMG; SCE; SMG; carrier transport efficiency; channel length; channel potential variation; control gate; dual material gate HEMT; electric field; high electron mobility transistor; screening gate; short channel effect suppression; single material gate structure; subthreshold behavior analytical modeling; subthreshold behavior simulation; two dimensional analytical model; work function; Analytical models; Educational institutions; Electric fields; Electric potential; HEMTs; Logic gates; Materials; Dual Material Gate (DMG); Short channel effect (SCEs); Single Material Gate (SMG); antimonide-based HEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Informatics, Electronics & Vision (ICIEV), 2014 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4799-5179-6

Type

conf

DOI

10.1109/ICIEV.2014.6850718

Filename

6850718