DocumentCode
1739957
Title
GaN thin film material bonded to host substrates using selective chemical etching
Author
Lee, K. ; Seo, S. ; Vrazel, M. ; Huang, Shanjin ; Doolittle, W. ; Jokerst, N. ; Brown, A.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
2
fYear
2000
fDate
2000
Firstpage
559
Abstract
We report on an approach toward GaN thin film separation and integration on dissimilar materials. To achieve the separation of thin film GaN, a LiGaO2 substrate is used for the GaN growth substrate. LiGaO2 is a promising substrate for high quality GaN growth, demonstrating good dislocation densities compared to GaN grown on sapphire
Keywords
III-V semiconductors; etching; gallium compounds; integrated optics; optical fabrication; substrates; GaN; GaN growth substrate; GaN thin film material; GaN thin film separation; LiGaO2; LiGaO2 substrate; dislocation densities; dissimilar material integration; high quality GaN growth; host substrates; selective chemical etching; Bonding; Chemicals; Etching; Gallium nitride; Glass; Photodetectors; Semiconductor films; Solvents; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location
Rio Grande
ISSN
1092-8081
Print_ISBN
0-7803-5947-X
Type
conf
DOI
10.1109/LEOS.2000.893964
Filename
893964
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