• DocumentCode
    1739966
  • Title

    Continuous-wave operation of InGaN/GaN violet laser diodes grown by low-pressure MOVPE

  • Author

    Hasnain, G. ; Takeuchi, Tetsuya ; Schneider, R. ; Song, Soonsil ; Twist, Rose ; Blomqvist, M. ; Kocot, Chris ; Flory, Curt

  • Author_Institution
    Agilent Technol., Palo Alto, CA, USA
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    655
  • Abstract
    Continuous-wave operation of etched-facet InGaN/GaN multi-quantum-well laser diodes grown by low pressure MOVPE on sapphire substrate is demonstrated on-wafer at 15°C. The threshold current density and voltage are 9.1 kA/cm2 and 7.6 V respectively
  • Keywords
    III-V semiconductors; MOCVD; current density; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; 15 C; 7.6 V; InGaN-GaN; V-I characteristics; continuous-wave operation; etched-facet MQW; low-pressure MOVPE; sapphire substrate; threshold current density; threshold voltage; violet laser diodes; Coatings; Current measurement; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium nitride; Laser beam cutting; Mirrors; Optical pulses; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
  • Conference_Location
    Rio Grande
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5947-X
  • Type

    conf

  • DOI
    10.1109/LEOS.2000.894012
  • Filename
    894012
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1739966