10 Gb/s InAlAs/InGaAs HEMT transimpedance preamplifiers

Author

Ao, Jin-Ping ; Liu, Wei-Ji ; Zeng, Qing-Ming ; Li, Xian-Jie ; Zhao, Yong-lin ; Xu, Xiao-Chun ; Liang, Chun-Guang

Author_Institution

Hebei Inst. of Technol., Shijiazhuang, China

fYear

2000

fDate

2000

Firstpage

156

Lastpage

159

Abstract

Design, fabrication and characteristics of a 10 Gb/s InAlAs/InGaAs HEMT monolithic transimpedance preamplifier are described. Maximum transconductance of 450 mS/mm, cutoff frequency f_T of 48 GHz and maximum oscillation frequency f_max of 55 GHz for a device with gate-length of 0.8 μm have been obtained. For the preamplifier, transimpedance gain and bandwidth are 47.5 dBΩ and 7.2 GHz respectively, the input equivalent noise density is 15.8 PA/√Hz

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; indium compounds; integrated circuit noise; integrated optoelectronics; optical receivers; preamplifiers; 0.8 micron; 10 Gbit/s; 450 mS/mm; 48 GHz; 55 GHz; 7.2 GHz; HEMT transimpedance preamplifiers; III-V semiconductors; InAlAs-InGaAs; MMIC amplifiers; cutoff frequency; input equivalent noise density; oscillation frequency; transimpedance gain; Bandwidth; Cutoff frequency; HEMTs; Indium compounds; Indium gallium arsenide; Integrated circuit noise; Noise figure; Optical noise; Preamplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000

Conference_Location

Beijing

Print_ISBN

0-7803-5743-4

Type

conf

DOI

10.1109/ICMMT.2000.895645

Filename

895645