In-situ fabrication of nanostructures by photo-enhanced chemical vapor deposition using optical near field

Summary form only given. Photo-enhanced chemical vapor deposition (PE-CVD) offers the possibility for the lateral integration (i.e., side by side) of different structures (different sequence of layers, materials, thickness and dopants), without the need of any lithography or etching, in a single growth run. In the PE-CVD process, with utilizing the optical near field with nanometric resolution as a light source, the technology allows one to fabricate and modify surface structure down to the nanometric level with high accuracy of controlling position and size. We have previously reported on the in-situ fabrication of the Zn pattern with minimum width of 15 nm by prenucleation method. We demonstrate the method to directly deposit metal atoms by gas phase photodissociation of metalorganic gas. The method has the advantage that the lateral integration of various materials is easy.