Title :
Population dynamics of resonantly excited carriers in InAs quantum dots
Author :
Bonadeo, N.H. ; Bloch, J. ; Birkedal, D. ; Shah, J. ; Pfeiffer, L.N. ; West, K.W.
Author_Institution :
Lucent Technol. Bell Labs., Holmdel, NJ, USA
Abstract :
Summary form only given. There is intense current interest in the dynamical properties of self-organized InAs quantum dots from fundamental and applied viewpoints. We report here measurement and analysis of the depopulation dynamics of the lowest electronic states following resonant excitation by a femtosecond pulse. Our results, obtained by using a high-sensitivity differential transmission technique that allows measurement of differential transmission as low as 10/sup -7/, provides the first direct information on the thermal activation rates of carriers in quantum dots. The results show that thermal activation by phonon absorption is an efficient process at room temperature and strongly argue against phonon-bottleneck effects.
Keywords :
III-V semiconductors; carrier mobility; indium compounds; light transmission; resonant states; self-adjusting systems; semiconductor device testing; semiconductor quantum dots; InAs; InAs quantum dots; depopulation dynamics; femtosecond pulse; high-sensitivity differential transmission technique; lowest electronic states; phonon absorption; phonon-bottleneck effects; population dynamics; quantum dot carriers; resonant excitation; resonantly excited carriers; room temperature a; self-organized; self-organized InAs quantum dots; thermal activation; thermal activation rates; Delay effects; Molecular beam epitaxial growth; Probes; Pulse measurements; Quantum dots; Radiative recombination; Resonance; Temperature dependence; US Department of Transportation; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-608-7