• DocumentCode
    1741811
  • Title

    Carrier interaction in self-assembled quantum dots studied by single dot spectroscopy

  • Author

    Sugimoto, Taku ; Toda, Yuichiro ; Ishida, Shigesuke ; Nishioka, Michi ; Someya, Takao ; Atakawa, Y.

  • Author_Institution
    Res. Center for Adv. Sci. & Tech., Tokyo Univ., Japan
  • fYear
    2000
  • fDate
    12-12 May 2000
  • Firstpage
    75
  • Lastpage
    76
  • Abstract
    Summary from only given. In recent years, many studies of the electronic states in self-assembled quantum dots (SAQDs) using single dot spectroscopy have been reported. PL spectra measured by single dot spectroscopy show discrete and sharp peaks which indicate 0D confinement of carriers. At higher excitation powers, PL spectra show the interesting phenomena where we see many peaks to be emerged. Delkel et al. (1998) calculated the excited states due to exciton interactions and the results corresponded well to PL spectra measured at different excitation powers. Landin et al. (1998) also reported the similar phenomena. However, these reports assume the ideal density of stares in SAQDs, and more precise measurements are still needed. In the paper, we performed single dot PL and PLE spectroscopy at various excitation powers. These results clearly demonstrate carrier interaction in SAQDs. We show the excitation power dependence of non-resonant PL spectra from InGaAs/GaAs SAQDs. This sample is island-etched, therefore the number of QDs excited is limited to about ten.
  • Keywords
    III-V semiconductors; electronic density of states; excited states; gallium arsenide; indium compounds; interface states; photoluminescence; self-assembly; semiconductor quantum dots; InGaAs-GaAs; InGaAs/GaAs; carrier interaction; carriers; discrete peaks; electronic states; excitation power dependence; excitation powers; excited states; exciton interactions; ideal density of stares; island-etched sample; nonresonant photoluminescence spectra; photoluminescence spectra; self-assembled quantum dots; sharp peaks; single dot spectroscopy; Assembly; Excitons; Gallium arsenide; Impurities; Indium gallium arsenide; Optical imaging; Quantum dots; Snow; Spectroscopy; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    1094-5695
  • Print_ISBN
    1-55752-608-7
  • Type

    conf

  • Filename
    901650