Title :
Transfer of coherence properties between exciton and continuum transitions in semiconductor quantum wells
Author :
Arlt, S. ; Kunde, J. ; Morier-Genoud, Francois ; Keller, Ulrich ; Siegner, Uwe
Author_Institution :
Inst. of Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
Summary form only given. Coherent dynamics in semiconductors can be strongly affected by interaction between energetically degenerate interband transitions. In this paper, we demonstrate for the first time to our knowledge that this strong interaction can be used to transfer the coherence properties of discrete excitons to continuum transitions and vice versa. This transfer can generate coherent radiation from the continuum, which is absent otherwise. Our results can be understood in a model that describes the strongly interacting exciton and continuum transitions as a multitude of excited states coupled to a common ground state. The transfer of coherence properties should be observable in any multilevel system with a common ground state.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; high-speed optical techniques; light coherence; multiwave mixing; semiconductor quantum wells; GaAs-AlGaAs; coherence properties; coherent dynamics; common ground state; continuum transitions; discrete excitons; energetically degenerate interband transitions; excited states; exciton transitions; multilevel system; semiconductor quantum wells; strong interaction; Excitons;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-608-7