DocumentCode
1741859
Title
A frequency reference based in VCSEL-driven dark line resonances in Cs vapor
Author
Kitching, J. ; Vukicevic, N. ; Weidermann, W. ; Zibrov, A.S. ; Hollberg, L. ; Knappe, S. ; Affolderbach, C. ; Wynands, R.
Author_Institution
Time & Frequency Div., Nat. Inst. of Stand. & Technol., Boulder, CO, USA
fYear
2000
fDate
12-12 May 2000
Firstpage
105
Lastpage
106
Abstract
Summary form only given. We report on recent experiments to use dark line coherent population trapping (CPT) resonances in cesium vapor as the basis for a compact frequency reference. The resonance is excited by directly modulating the injection current of a VCSEL at one-half the ground state hyperfine transition of Cs (4.6 GHz) to produce RF sidebands on the optical carrier. The laser output is then passed through a room-temperature cell containing Cs at its vapor pressure together with 8.7 kPa of Neon buffer gas and the transmitted optical power is detected in a photodiode. When the laser carrier is tuned half way between the two hyperfine components of the D/sub 2/ line at 852 nm, and the RF modulation frequency is adjusted to be equal to one-half the hyperfine splitting, the absorption of the sidebands through the cell is slightly reduced due to the CPT effect. As the RF frequency is scanned over the resonance, lock-in detection is used to produce a /spl sim/1 kHz wide dispersive error signal which is in turn used to stabilize the modulation frequency. The narrow signal is the result of the buffer gas, which reduces the time-of-flight broadening of the transition.
Keywords
atom-photon collisions; caesium; frequency standards; ground states; hyperfine structure; radiation pressure; resonant states; spectral line breadth; 1 kHz; 4.6 GHz; 8.7 kPa; 852 nm; Cs; Cs vapor; Cs-Ne; D/sub 2/ line; Ne; Ne buffer gas; RF frequency; RF modulation frequency; RF sidebands; VCSEL; VCSEL-driven dark line resonances; absorption; buffer gas; compact frequency reference; dark line coherent population trapping resonances; dispersive error signal; frequency reference; ground state hyperfine transition; hyperfine components; hyperfine splitting; injection current; laser carrier; laser output; lock-in detection; modulation frequency; optical carrier; photodiode; room-temperature cell; sidebands; time-of-flight broadening; transition; transmitted optical power; vapor pressure; Frequency modulation; Gas lasers; Laser excitation; Laser transitions; Laser tuning; Optical buffering; Optical modulation; Radio frequency; Resonance; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location
San Francisco, CA, USA
ISSN
1094-5695
Print_ISBN
1-55752-608-7
Type
conf
Filename
901712
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