Title :
In-well diffusion in InGaAsP multiple quantum wells
Author :
Marshall, D. ; Ebrahimzadeh, M. ; Miller, A. ; Button, C.
Author_Institution :
Sch. of Phys. & Astron., St. Andrews Univ., UK
Abstract :
Summary form only given. We present transient amplitude and spin grating measurements in room temperature InGaAsP multiple quantum wells (MQWs) for the first time using picosecond laser pulses at 1.525 microns. We deduce in-well diffusion coefficients and compare these with those previously reported for GaAs.
Keywords :
III-V semiconductors; diffraction gratings; diffusion; gallium arsenide; gallium compounds; indium compounds; multiwave mixing; semiconductor quantum wells; 1.525 mum; GaAs; InGaAsP; InGaAsP multiple quantum wells; in-well diffusion; in-well diffusion coefficients; picosecond laser pulses; room temperature; spin grating measurements; transient amplitude; Gallium arsenide; Gratings; Optical pulses; Pulse measurements; Quantum well devices; Quantum well lasers; Temperature measurement; Time measurement;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-608-7
