Title :
Quantum interferometric lithography: exploiting entanglement to beat the diffraction limit
Author :
Boto, A.N. ; Abrams, D.S. ; Williams, C.P. ; Dowling
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Summary form only given. It has been known for some time that entangled photon pairs, such as generated by spontaneous parametric down conversion, have unusual imaging characteristics with sub-shot-noise interferometric phase measurement. In fact, Fonseca, et al., recently demonstrated resolution of a two-slit diffraction patterned at half the Rayleigh limit in a coincidence counting experiment. What we show is that this type of effect is possible not only in coincidence counting experiments, but also in real two-photon absorbing systems, such as those used in classical interferometric lithography. In particular, we will demonstrate that quantum entanglement is the resource that allows sub-diffraction limited lithography.
Keywords :
light diffraction; light interferometry; optical frequency conversion; photolithography; photon counting; Rayleigh limit; classical interferometric lithography; coincidence counting experiment; diffraction limit; entangled photon pairs; imaging characteristics; quantum entanglement; quantum interferometric lithography; real two-photon absorbing systems; spontaneous parametric down conversion; sub-diffraction limited lithography; sub-shot-noise interferometric phase measurement; two-slit diffraction pattern; Diffraction; Interferometric lithography; Quantum entanglement;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-608-7