Exciton-exciton and exciton-phonon scattering strengths in GaAs/AlAs quantum wires and wells

Author

Gopal, A.V. ; Vengurlekar, A.S. ; Kumar, R. ; Prabhu, S.S. ; Laruelle, Francois ; Etienne, B. ; Shah, J.

Author_Institution

Tata Inst. of Fundamental Res., Bombay, India

fYear

2000

fDate

12-12 May 2000

Firstpage

267

Abstract

Summary form only given. Devices using quantum wires (QWR) are of much current interest. In recent times, several investigations have focussed attention on optical properties of QWRs at high excitation densities. In comparison, studies of excitonic interactions in QWRs are few. We perform femtosecond degenerate four wave mixing (DFWM) and picosecond photoluminescence measurements at 8 K on GaAs/AlAs QWRs and QWs. Our results show that while exciton-exciton scattering is reduced in the QWRs, exciton-phonon scattering is enhanced. The QWRs are MBE grown on a vicinal GaAs substrate in the form of a low disorder AlGaAs lateral superlattice with a period of 32 nm and a vertical width of 10 nm.

Keywords

III-V semiconductors; aluminium compounds; biexcitons; gallium arsenide; multiwave mixing; phonon-exciton interactions; photoluminescence; semiconductor quantum wells; semiconductor quantum wires; time resolved spectra; 8 K; GaAs-AlAs; exciton-exciton scattering; exciton-phonon scattering; excitonic interactions; femtosecond DFWM; picosecond photoluminescence; quantum wells; quantum wires; radiative recombination; time integrated DFWM; Four-wave mixing; Gallium arsenide; Optical mixing; Optical scattering; Optical superlattices; Particle scattering; Performance evaluation; Photoluminescence; Ultrafast optics; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest

Conference_Location

San Francisco, CA, USA

ISSN

1094-5695

Print_ISBN

1-55752-608-7

Type

conf

Filename

902086