Title :
Spin lifetimes in III-V heterostructures originating from zincblende symmetry
Author :
Lau, W.H. ; Flatte, M.E.
Author_Institution :
Iowa Univ., Iowa City, IA, USA
Abstract :
Summary form only given. We have calculated the spin lifetimes for GaAs/AlGaAs and InGaAs/InP quantum wells using a fourteen bulk band basis which accounts for the zincblende symmetry of the heterostructure constituents. The spin lifetimes agree with recent experiments within a factor of two, indicating the importance of accurate band structure calculations for zincblende type heterostructures.
Keywords :
CESR; III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; indium compounds; semiconductor quantum wells; spin dynamics; D´yakonov-Perel mechanism; GaAs-AlGaAs; III-V heterostructures; InGaAs-InP; coherent spin states; conduction subband spin splitting; electron spin dynamics; electron spin relaxation; fourteen bulk band basis; quantum well structures; spin lifetimes; zincblende symmetry; Delay effects; Electrons; III-V semiconductor materials; Laser excitation; Laser transitions; Optical pumping; Probes; Temperature; Tiles; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-608-7
