A high speed and low voltage BiCMOS tristate buffer with positive and negative charge pump

Author

Suriyaammaranon, C. ; Dejhan, K. ; Cheevasuvit, F. ; Soonyeekan, C.

Author_Institution

Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand

Volume

1

fYear

2000

fDate

2000

Firstpage

11

Abstract

A novel high speed, low voltage BiCMOS tristate buffer is presented. The single MOS driving with pass transistor technique is used to improve the driving capability. Furthermore, the positive and negative charge pump with complementary BiCMOS technique to eliminate the voltage loss due to base-emitter turn on voltage is used to enhance the driving capability and realize high speed, low voltage with full swing operation. The simulation results have shown that it outperforms other previous tristate circuits

Keywords

BiCMOS digital integrated circuits; buffer circuits; high-speed integrated circuits; base-emitter turn on voltage; driving capability; low voltage BiCMOS; negative charge pump; pass transistor technique; positive charge pump; tristate buffer; voltage loss; Application specific integrated circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Charge pumps; Degradation; Impedance; Low voltage; MOSFETs; Power dissipation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2000. ICECS 2000. The 7th IEEE International Conference on

Conference_Location

Jounieh

Print_ISBN

0-7803-6542-9

Type

conf

DOI

10.1109/ICECS.2000.911466

Filename

911466