مرکز منطقه ای اطلاع رساني علوم و فناوري - A simulation study to quantify the advantages of silicon-on-insulator (SOI) technology for low power

DocumentCode :

1743757

Title :

A simulation study to quantify the advantages of silicon-on-insulator (SOI) technology for low power

Author :

Donaghy, David ; Brackenbury, Linda ; Hall, Steve

Author_Institution :

University of Liverpool

fYear :

2001

fDate :

2001

Firstpage :

42675

Lastpage :

42680

fLanguage :

English

Publisher :

iet

Conference_Titel :

Low Power IC Design (Ref. No. 2001/042), IEE Seminar on

Conference_Location :

IET

Type :

conf

Filename :

912413

Link To Document :